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RCHIVE INFORMATION
MRF18060ALR3 MRF18060ALSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications. Specified for GSM 1805 -- 1880 MHz.
?
Typical GSM Performance, Full Frequency Band (1805 -- 1880 MHz)
Power Gain ? 13 dB @ 60 Watts
Efficiency ? 45% @ 60 Watts
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Output Power
Features
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Internally Matched for Ease of Use
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High Gain, High Efficiency and High Linearity
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Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
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Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″
Nominal.
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
≥
25°C
Derate above 25°C
PD
180
1.03
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.97
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18060A
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF18060ALR3
MRF18060ALSR3
1805--1880 MHz, 60 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF18060ALR3
CASE 465A--06, STYLE 1
NI--780S
MRF18060ALSR3
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Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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